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| ? semiconductor components industries, llc, 2012 march, 2014 ? rev. 14 1 publication order number: mun5311dw1t1/d mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1gseries dual bias resistor transistors npn and pnp silicon surface mount transistors with monolithic bias resistor network the bias resistor transistor (brt) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base ? emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the mun5311dw1t1g series, two complementary brt devices are housed in the sot ? 363 package which is ideal for low power surface mount applications where board space is at a premium. features ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch/3000 unit tape and reel ? s and nsv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) rating symbol value unit collector-base voltage v cbo 50 vdc collector-emitter voltage v ceo 50 vdc collector current i c 100 madc stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 363 case 419b style 1 marking diagram ordering and device marking information see detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) http://onsemi.com http://onsemi.com xx m 1 6 (note: microdot may be in either location) *date code orientation and/or position may vary depending upon manufacturing location. xx = device code m = date code* = pb ? free package
mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 2 thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1) 256 (note 2) 1.5 (note 1) 2.0 (note 2) mw mw/ c thermal resistance ? junction-to-ambient r ja 670 (note 1) 490 (note 2) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1) 385 (note 2) 2.0 (note 1) 3.0 (note 2) mw mw/ c thermal resistance ? junction-to-ambient r ja 493 (note 1) 325 (note 2) c/w thermal resistance ? junction-to-lead r jl 188 (note 1) 208 (note 2) c/w junction and storage temperature t j , t stg ? 55 to +150 c 1. fr ? 4 @ minimum pad 2. fr ? 4 @ 1.0 x 1.0 inch pad ordering, shipping, device marking and resistor values device package marking r1 (k) r2 (k) shipping ? mun5311dw1t1g, smun5311dw1t1g, smun5311dw1t2g sot ? 363 (pb ? free) 11 10 10 3,000 / tape & reel mun5312dw1t1g, smun5312dw1t1g sot ? 363 (pb ? free) 12 22 22 3,000 / tape & reel mun5313dw1t1g, smun5313dw1t1g sot ? 363 (pb ? free) 13 47 47 3,000 / tape & reel mun5314dw1t1g, smun5314dw1t1g sot ? 363 (pb ? free) 14 10 47 3,000 / tape & reel mun5315dw1t1g, smun5315dw1t1g sot ? 363 (pb ? free) 15 10 3,000 / tape & reel mun5316dw1t1g sot ? 363 (pb ? free) 16 4.7 3,000 / tape & reel mun5330dw1t1g, smun5330dw1t1g sot ? 363 (pb ? free) 30 1.0 1.0 3,000 / tape & reel mun5331dw1t1g sot ? 363 (pb ? free) 31 2.2 2.2 3,000 / tape & reel mun5332dw1t1g, nsvmun5332dw1t1g sot ? 363 (pb ? free) 32 4.7 4.7 3,000 / tape & reel mun5333dw1t1g, NSVMUN5333DW1T1G sot ? 363 (pb ? free) 33 4.7 47 3,000 / tape & reel mun5334dw1t1g, nsvmun5334dw1t1g sot ? 363 (pb ? free) 34 22 47 3,000 / tape & reel mun5335dw1t1g, smun5335dw1t1g, smun5335dw1t2g sot ? 363 (pb ? free) 35 2.2 47 3,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = 50 v, i e = 0) i cbo ? ? 100 nadc collector-emitter cutoff current (v ce = 50 v, i b = 0) i ceo ? ? 500 nadc emitter-base cutoff current (v eb = 6.0 v, i c = 0) mun5311dw1t1g, smun5311dw1t1g mun5312dw1t1g, smun5312dw1t1g mun5313dw1t1g, smun5313dw1t1g mun5314dw1t1g, smun5314dw1t1g mun5315dw1t1g, smun5315dw1t1g mun5316dw1t1g mun5330dw1t1g, smun5330dw1t1g mun5331dw1t1 g mun5332dw1t1g, nsvmun5332dw1t1g mun5333dw1t1g, NSVMUN5333DW1T1G mun5334dw1t1g, nsvmun5334dw1t1g mun5335dw1t1g, smun5335dw1t1g i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 madc collector-base breakdown voltage (i c = 10 a, i e = 0) v (br)cbo 50 ? ? vdc collector-emitter breakdown voltage (note 3) (i c = 2.0 ma, i b = 0) v (br)ceo 50 ? ? vdc on characteristics (note 3) dc current gain (v ce = 10 v, i c = 5.0 ma) mun5311dw1t1g, smun5311dw1t1g mun5312dw1t1g, smun5312dw1t1g mun5313dw1t1g, smun5313dw1t1g mun5314dw1t1g, smun5314dw1t1g mun5315dw1t1g, smun5315dw1t1g mun5316dw1t1g mun5330dw1t1g, smun5330dw1t1g mun5331dw1t1g mun5332dw1t1g, nsvmun5332dw1t1g mun5333dw1t1g, NSVMUN5333DW1T1G mun5334dw1t1g, nsvmun5334dw1t1g mun5335dw1t1g, smun5335dw1t1g h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 ? ? ? ? ? ? ? ? ? ? ? ? collector-emitter saturation voltage (i c = 10 ma, i b = 0.3 ma) mun5311dw1t1g, smun5311dw1t1g mun5312dw1t1g, smun5312dw1t1g mun5313dw1t1g, smun5313dw1t1g mun5314dw1t1g, smun5314dw1t1g mun5335dw1t1g, smun5335dw1t1g (i c = 10 ma, i b = 5 ma) mun5330dw1t1g, smun5330dw1t1g mun5331dw1t1g (i c = 10 ma, i b = 1 ma) mun5315dw1t1g, smun5315dw1t1g mun5316dw1t1g mun5332dw1t1g, nsvmun5332dw1t1g mun5333dw1t1g, NSVMUN5333DW1T1G mun5334dw1t1g, nsvmun5334dw1t1g v ce(sat) ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 vdc mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 4 characteristic unit max typ min symbol on characteristics (note 3) output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) mun5311dw1t1g, smun5311dw1t1g mun5312dw1t1g, smun5312dw1t1g mun5314dw1t1g, smun5314dw1t1g mun5315dw1t1g, smun5315dw1t1g mun5316dw1t1g mun5330dw1t1g, smun5330dw1t1g mun5331dw1t1g mun5332dw1t1g, nsvmun5332dw1t1g mun5333dw1t1g, NSVMUN5333DW1T1G mun5334dw1t1g, nsvmun5334dw1t1g mun5335dw1t1g, smun5335dw1t1g (v cc = 5.0 v, v b = 3.5 v, r l = 1.0 k ) mun5313dw1t1g, smun5313dw1t1g v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.5 v, r l = 1.0 k ) mun5311dw1t1g, smun5311dw1t1g mun5312dw1t1g, smun5312dw1t1g mun5313dw1t1g, smun5313dw1t1g mun5314dw1t1g, smun5314dw1t1g mun5333dw1t1g, NSVMUN5333DW1T1G mun5334dw1t1g, nsvmun5334dw1t1g mun5335dw1t1g, smun5335dw1t1g (v cc = 5.0 v, v b = 0.050 v, r l = 1.0 k ) mun5330dw1t1g, smun5330dw1t1g (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) mun5315dw1t1g, smun5315dw1t1g mun5316dw1t1g mun5331dw1t1g mun5332dw1t1g, nsvmun5332dw1t1g v oh 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? vdc input resistor mun5311dw1t1g, smun5311dw1t1g mun5312dw1t1g, smun5312dw1t1g mun5313dw1t1g, smun5313dw1t1g mun5314dw1t1g, smun5314dw1t1g mun5315dw1t1g, smun5315dw1t1g mun5316dw1t1g mun5330dw1t1g, smun5330dw1t1g mun5331dw1t1g mun5332dw1t1g, nsvmun5332dw1t1g mun5333dw1t1g, NSVMUN5333DW1T1G mun5334dw1t1g, nsvmun5334dw1t1g mun5335dw1t1g, smun5335dw1t1g r1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 k resistor ratio mun5311dw1t1g/smun5311dw1t1g/mun5312dw1t1g/ smun5312dw1t1g/mun5313dw1t1g/smun5313dw1t1g mun5314dw1t1g/smun5314dw1t1g mun5315dw1t1g/smun5315dw1t1g/mun5316dw1t1g mun5330dw1t1g/smun5330dw1t1g/mun5331dw1t1g/ mun5332dw1t1g/nsvmun5332dw1t1g mun5333dw1t1g/NSVMUN5333DW1T1G mun5334dw1t1g/nsvmun5334dw1t1g mun5335dw1t1g/smun5335dw1t1g r1/r2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.0 0.21 ? 1.0 0.1 0.47 0.047 1.2 0.25 ? 1.2 0.185 0.56 0.056 3. pulse test: pulse width < 300 s, duty cycle < 2.0% mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 5 figure 1. derating curve 300 200 150 100 50 0 ? 50 0 50 100 150 t a , ambient temperature ( c) r ja = 490 c/w 250 p d , power dissipation (mw) all mun5311dw1t1g series devices mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 6 typical electrical characteristics ? mun5311dw1t1g, smun5311dw1t1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 10 02030 i c , collector current (ma) 10 1 0.1 t a =-25 c 75 c 25 c 40 50 figure 3. dc current gain figure 4. output capacitance 1 0.1 0.01 0.001 020 40 50 i c , collector current (ma) 1000 100 10 1 10 100 i c , collector current (ma) t a =75 c 25 c -25 c t a =-25 c 25 c figure 5. output current versus input voltage 75 c 25 c t a =-25 c 100 10 1 0.1 0.01 0.001 01 234 v in , input voltage (volts) 56 78 910 figure 6. input voltage versus output current 50 010203040 4 3 1 2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 7 typical electrical characteristics ? mun5311dw1t1g, smun5311dw1t1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 8. dc current gain figure 9. output capacitance figure 10. output current versus input voltage figure 11. input voltage versus output current 0.01 20 i c , collector current (ma) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 8 typical electrical characteristics ? mun5312dw1t1g, smun5312dw1t1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c figure 13. dc current gain figure 14. output capacitance figure 15. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 75 c 25 c 100 0 v in , input voltage (volts) 10 1 0.1 0.01 0.001 246810 t a =-25 c 0 i c , collector current (ma) 100 t a =-25 c 75 c 10 1 0.1 10 20 30 40 50 25 c figure 16. input voltage versus output current 0.001 t a =-25 c 75 c 25 c 0.01 0.1 1 40 i c , collector current (ma) 0 20 50 50 0 10 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) i c /i b = 10 v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 9 typical electrical characteristics ? mun5312dw1t1g, smun5312dw1t1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c figure 18. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 19. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 20. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 21. input voltage versus output current 0.01 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010 20 30 40 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =-25 c v o = 5 v v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 10 typical electrical characteristics ? mun5313dw1t1g, smun5313dw1t1g npn transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 22. v ce(sat) versus i c 0246810 100 10 1 0.1 0.01 0.001 v in , input voltage (volts) t a =-25 c 75 c 25 c figure 23. dc current gain figure 24. output capacitance 100 10 1 0.1 010 203040 50 i c , collector current (ma) figure 25. output current versus input voltage 1000 10 i c , collector current (ma) t a =75 c 25 c -25 c 100 10 1 100 25 c 75 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) figure 26. input voltage versus output current 0 20 40 50 10 1 0.1 0.01 i c , collector current (ma) 25 c 75 c v ce = 10 v f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 t a =-25 c t a =-25 c v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 11 typical electrical characteristics ? mun5313dw1t1g, smun5313dw1t1g pnp transistor v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 27. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c figure 28. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) -25 c figure 29. output capacitance figure 30. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) -25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 31. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =-25 c 25 c 75 c 50 i c /i b = 10 t a =-25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 12 typical electrical characteristics ? mun5314dw1t1g, smun5314dw1t1g npn transistor 10 1 0.1 01020304050 100 10 1 0246810 4 3.5 3 2.5 2 1.5 1 0.5 0 02468101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 32. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 33. dc current gain 1 10 100 i c , collector current (ma) figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 36. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 300 250 200 150 100 50 0 2468 1520405060708090 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 0.2 v t a =-25 c 75 c v o = 5 v 25 c 75 c v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 13 typical electrical characteristics ? mun5314dw1t1g, smun5314dw1t1g pnp transistor 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 1520 2530 3540 4550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 37. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 38. dc current gain 1 10 100 i c , collector current (ma) figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 41. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 14 typical electrical characteristics ? mun5315dw1t1g, smun5315dw1t1g npn transistor 75 c 25 c ? 25 c figure 42. v ce(sat) versus i c figure 43. dc current gain figure 44. output capacitance figure 45. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 46. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 15 typical electrical characteristics ? mun5315dw1t1g, smun5315dw1t1g pnp transistor 75 c 25 c ? 25 c figure 47. v ce(sat) versus i c figure 48. dc current gain figure 49. output capacitance figure 50. output current versus input voltage v in , input voltage (volts) figure 51. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 16 typical electrical characteristics ? mun5316dw1t1g npn transistor 75 c 25 c ? 25 c figure 52. v ce(sat) versus i c figure 53. dc current gain figure 54. output capacitance figure 55. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 56. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 17 typical electrical characteristics ? mun5316dw1t1g pnp transistor 75 c 25 c ? 25 c figure 57. v ce(sat) versus i c figure 58. dc current gain figure 59. output capacitance figure 60. output current versus input voltage v in , input voltage (volts) figure 61. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 0.01 0.1 30 v r , reverse bias voltage (volts) 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 35 25 15 5 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 18 typical electrical characteristics ? mun5330dw1t1g, smun5330dw1t1g npn transistor 75 c 25 c ? 25 c figure 62. v ce(sat) versus i c figure 63. dc current gain figure 64. output current versus input voltage v in , input voltage (volts) figure 65. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 0.01 0.1 v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 19 typical electrical characteristics ? mun5330dw1t1g, smun5330dw1t1g pnp transistor 75 c 25 c ? 25 c figure 66. v ce(sat) versus i c figure 67. dc current gain figure 68. output capacitance figure 69. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 70. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 20 typical electrical characteristics ? mun5331dw1t1g npn transistor 75 c 25 c ? 25 c figure 71. v ce(sat) versus i c figure 72. dc current gain figure 73. output capacitance figure 74. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 75. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 12 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 10 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 21 typical electrical characteristics ? mun5331dw1t1g pnp transistor 75 c 25 c ? 25 c figure 76. v ce(sat) versus i c figure 77. dc current gain figure 78. output capacitance figure 79. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 80. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 4.5 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 22 typical electrical characteristics ? mun5332dw1t1g, nsvmun5332dw1t1g npn transistor 75 c 25 c ? 25 c figure 81. v ce(sat) versus i c figure 82. dc current gain figure 83. output capacitance figure 84. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 85. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 23 typical electrical characteristics ? mun5332dw1t1g, nsvmun5332dw1t1g pnp transistor 75 c 25 c ? 25 c figure 86. v ce(sat) versus i c figure 87. dc current gain figure 88. output capacitance figure 89. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 90. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3 100 5 6 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 24 typical electrical characteristics ? mun5333dw1t1g, NSVMUN5333DW1T1G npn transistor 75 c 25 c ? 25 c figure 91. v ce(sat) versus i c figure 92. dc current gain figure 93. output capacitance figure 94. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 95. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 20 3.5 3 2.5 100 5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 25 typical electrical characteristics ? mun5333dw1t1g, NSVMUN5333DW1T1G pnp transistor 75 c 25 c ? 25 c figure 96. v ce(sat) versus i c figure 97. dc current gain figure 98. output capacitance figure 99. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 100. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 5 1 3 7 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 26 typical electrical characteristics ? mun5334dw1t1g, nsvmun5334dw1t1g npn transistor 75 c 25 c ? 25 c figure 101. v ce(sat) versus i c figure 102. dc current gain figure 103. output capacitance figure 104. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 105. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 3 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 2.5 0.5 1.5 3.5 10 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 27 typical electrical characteristics ? mun5334dw1t1g, nsvmun5334dw1t1g pnp transistor 75 c 25 c ? 25 c figure 106. v ce ( sat ) versus i c figure 107. dc current gain i c , collector current (ma) 1 0.1 30 25 15 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 75 c 25 c t a = ? 25 c 0.01 20 100 5 i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 28 typical electrical characteristics ? mun5335dw1t1g, smun5335dw1t1g npn transistor 75 c 25 c ? 25 c figure 108. v ce(sat) versus i c figure 109. dc current gain figure 110. output capacitance figure 111. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 112. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 29 typical electrical characteristics ? mun5335dw1t1g, smun5335dw1t1g pnp transistor 75 c 25 c ? 25 c figure 113. v ce(sat) versus i c figure 114. dc current gain figure 115. output capacitance figure 116. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 117. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 30 typical electrical characteristics ? mun5336dw1t1g npn transistor 75 c 25 c ? 25 c figure 118. v ce(sat) versus i c figure 119. dc current gain figure 120. output capacitance figure 121. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 122. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 100 10 1 100 10 1 0.01 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain (normalized) 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 10 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = ? 25 c v ce = 10 v 75 c 25 c t a = ? 25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = ? 25 c f = 1 mhz i e = 0 v t a = 25 c mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 31 typical electrical characteristics ? mun5336dw1t1g pnp transistor 75 c 25 c ? 25 c figure 123. v ce(sat) versus i c figure 124. dc current gain figure 125. output capacitance figure 126. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 127. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 5 10 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 32 typical electrical characteristics ? mun5337dw1t1g npn transistor figure 128. v ce(sat) versus i c figure 129. dc current gain figure 130. output capacitance figure 131. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 132. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 0.01 1000 h fe , dc current gain (normalized) 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 11 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = ? 25 c v o = 5 v 75 c 25 c t a = ? 25 c v o = 0.2 v 75 c 25 c t a = ? 25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = ? 25 c v ce(sat) , collector voltage (volts) mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 33 typical electrical characteristics ? mun5337dw1t1g pnp transistor 75 c 25 c ? 25 c figure 133. v ce(sat) versus i c figure 134. dc current gain figure 135. output capacitance figure 136. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 137. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 1000 10 1 0.001 v ce(sat) , collector voltage (volts) h fe , dc current gain 1.5 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.5 1 2 4 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 75 c 25 c t a = ? 25 c 0.01 35 25 15 5 0.01 0.1 30 3.5 3 2.5 100 4.5 5 10 f = 1 mhz i e = 0 v t a = 25 c v o = 5 v v o = 0.2 v i c /i b = 10 v ce = 10 v mun5311dw1t1g, smun5311dw1t1g, nsvmun5311dw1t1g series http://onsemi.com 34 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* sc ? 88/sc70 ? 6/sot ? 363 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mun5311dw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative |
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